BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.

Author: Faejar Vudogami
Country: Suriname
Language: English (Spanish)
Genre: Business
Published (Last): 23 March 2013
Pages: 318
PDF File Size: 2.84 Mb
ePub File Size: 15.65 Mb
ISBN: 371-1-63289-614-7
Downloads: 23110
Price: Free* [*Free Regsitration Required]
Uploader: Tygozshura

August 8 Rev 1.

Datasheet «BUT11AF»

Switching times waveforms with inductive datashest. Normalised power derating and second breakdown curves. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Typical base-emitter and collector-emitter saturation voltages. Test circuit for VCEOsust. UNIT – – 1. Extension for repetitive pulse operation. Exposure to limiting values for extended periods may affect device reliability.

Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.


Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Refer to mounting instructions for F-pack envelopes.

BUT11AF Datasheet pdf – NPN Silicon Transistor – Fairchild Semiconductor

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Test circuit resistive load. No liability will be accepted by the publisher for any consequence of its use.

The information presented in this document does not form part of any quotation or contract, it is believed but11ac be accurate and reliable and may be changed without notice.

Region of permissible DC operation. Product specification This data sheet contains final product specifications.

Reverse bias safe operating area. Typical base-emitter saturation voltage.


Application information Where application information is given, it is advisory and does not form part of the specification. Reproduction in whole datasjeet in part is prohibited without the prior written consent of the copyright owner.


Stress above one or more of the limiting values may cause permanent damage to the device. Oscilloscope display for VCEOsust. Datawheet bias safe operating area.

But11af datasheet view

Switching times waveforms with resistive load. Typical DC current gain. August 4 Ptot max and Ptot peak max lines. August 2 Rev 1. Test circuit inductive load.

SOT; The seating plane is electrically isolated from all terminals. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. August 7 Rev 1.